کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1264128 | 972109 | 2010 | 7 صفحه PDF | دانلود رایگان |
Spatial control of the ambipolar charge transport properties in organic thin films made from the solution-processible dicyanomethylene-substituted quinoidal quaterthiophene [QQT(CN)4] can be achieved by direct laser writing. Here we report on the laser patterning and the electrical characterization of QQT(CN)4-based complementary metal oxide semiconductor (CMOS) inverters. Ambipolar p-type dominant organic field-effect transistors are combined with laser-converted n-type devices in single QQT(CN)4 organic thin films using top-contact configuration. Influence of the gate dielectric on the electrical response of these logic circuits is discussed and taken into account for an optimization of their performance. Solution-processed organic inverters with enhanced gain as high as 15 and improved on- and off-states are successfully fabricated, confirming the potential of QQT(CN)4 for high performance purely CMOS organic integrated circuits.
Journal: Organic Electronics - Volume 11, Issue 8, August 2010, Pages 1469–1475