کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1264188 | 972113 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Flexible hybrid complementary inverters with high gain and balanced noise margins using pentacene and amorphous InGaZnO thin-film transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Flexible hybrid complementary inverters with high gain and balanced noise margins using pentacene and amorphous InGaZnO thin-film transistors Flexible hybrid complementary inverters with high gain and balanced noise margins using pentacene and amorphous InGaZnO thin-film transistors](/preview/png/1264188.png)
چکیده انگلیسی
Hybrid organic–inorganic complementary inverters composed of pentacene and amorphous InGaZnO for p- and n-channel thin-film transistors (TFTs) were fabricated on flexible polyethersulfone substrates. The p- and n-channel TFTs showed saturation mobility values of 0.15 and 3.8 cm2/Vs, respectively. We propose a new method to find the switching threshold voltage and the optimum supply voltage of complementary inverters. With this method, we demonstrate hybrid complementary inverters that at a supply voltage of 25 V show a high gain of 130 V/V at a switching threshold voltage of 12.5 V. Operating these inverters at the ideal supply voltage leads to high and balanced noise margins with values of 84% of their theoretical maximum.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 11, Issue 6, June 2010, Pages 1074–1078
Journal: Organic Electronics - Volume 11, Issue 6, June 2010, Pages 1074–1078
نویسندگان
J.B. Kim, C. Fuentes-Hernandez, S.-J. Kim, S. Choi, B. Kippelen,