Poly(9-vinylcarbazole)–graphene oxide composite field-effect transistors with enhanced mobility

• Solution processed OFETs based on PVK and graphene oxide (GO) flakes are developed.
• PVK:GO OFETs exhibit the mobility ∼3.8–6.7 cm2 V−1 s−1 and on/off ∼102–103.
• The reversible switching of the source–drain current is found in PVK:GO OFETs.
• Incorporating of GO flakes at low concentration enhances the mobility of OFETs.

We report on a solution processed hybrid organic field-effect transistors (OFETs) incorporating both organic semiconductor – poly(9-vinylcarbazole) (PVK) and graphene oxide (GO) flakes. We have found that PVK:GO hybrid OFETs with Au–Al source–drain electrodes exhibit the mobility as high as 3.8–6.7 cm2 V−1 s−1 under concentration of the GO flakes varies from 3 up to 9.5 wt.% respectively. The on/off ratio of PVK:GO hybrid OFETs is found to be ∼102–103 at source–drain and gate operating voltages below ∼5 V. The reversible switching of the source–drain current (from low to high ISD and back) is found at positive and negative VSD ∼ 12–13 V in the PVK:GO OFET structures (GO ∼ 3 wt.%) with Au–Al source–drain electrodes. The possible mechanism of enhancing field-effect mobility in the PVK:GO OFET structures is discussed.

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