کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1264482 | 972143 | 2007 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Improved electrical stability and UV emission of zinc oxide thin films prepared by combination of metalorganic chemical vapor deposition technique and post-deposition hydrogen doping
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Improved electrical stability and UV emission of zinc oxide thin films prepared by combination of metalorganic chemical vapor deposition technique and post-deposition hydrogen doping Improved electrical stability and UV emission of zinc oxide thin films prepared by combination of metalorganic chemical vapor deposition technique and post-deposition hydrogen doping](/preview/png/1264482.png)
چکیده انگلیسی
Fourier transform infrared and photoluminescence spectroscopy provide strong evidence that post-deposition hydrogen doping of polycrystalline zinc oxide (ZnO) thin films improves the resistivity by increasing hydrogen-related shallow donors and hydrogen passivation of native defects. Improvement of the electrical stability and UV emission confirm that post-deposition hydrogen doping is a promising method to achieve high quality ZnO thin films for the use as transparent electrodes and/or UV light emitters in thin-film-based optoelectronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 8, Issue 1, February 2007, Pages 51–56
Journal: Organic Electronics - Volume 8, Issue 1, February 2007, Pages 51–56
نویسندگان
Seung Yeop Myong, Koeng Su Lim,