کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1264595 972159 2012 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Simple source/drain contact structure for solution-processed n-channel fullerene thin-film transistors
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Simple source/drain contact structure for solution-processed n-channel fullerene thin-film transistors
چکیده انگلیسی

This paper describes a simple approach for reducing the contact resistances at the source/drain (S/D) contacts in solution-processed n-channel organic thin-film transistors (OTFTs). Blending poly(ethylene glycol) (PEG) into the fullerene semiconducting layer significantly improved the device performance. The PEG molecules in the blends underwent chemical reactions with the Al atoms of the electrodes, thereby forming a better organic-metal interface. Further, the rougher surface obtained after the addition of PEG could also increase the effective contact area, thereby reducing the resistance. As a result, the electrical properties of the devices were significantly improved. Unlike conventional bilayer structures, this approach allows the ready preparation of OTFTs with a low electron injection barrier at the S/D contacts.

Figure optionsDownload as PowerPoint slideHighlights
► We presented a unique approach for preparing high-performance n-channel organic thin-film transistors.
► We found that the addition of poly(ethylene glycol) could enhance the device performance.
► The poly(ethylene glycol) molecules reacted with the Al electrodes during the fabrication process of the source/drain contacts.
► The resulting structure/interface exhibited low contact resistances, thereby enhancing the device performance significantly.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 13, Issue 4, April 2012, Pages 599–603
نویسندگان
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