High mobility multibit nonvolatile memory elements based organic field effect transistors with large hysteresis

• Multibit nonvolatile memory elements with the polyquinoline dielectric layer was demonstrated.
• The hole mobility of as high as 1.5 cm2 V−1 s−1 was achieved.
• The memory elements have good stability and long retention time with low operation voltage.

High mobility multibit nonvolatile memory elements based on organic field effect transistors with a thin layer of polyquinoline (PQ) were reported. The devices show a high mobility of 1.5 cm2 V−1 s−1 in the saturation region which is among the best reported for nonvolatile organic memory transistors. The multibit nonvolatile memory elements can be operated at voltage less than 100 V with good stability under continuous operation condition and show long retention time. The different initial scanning positive gate voltages to −100 V result in several ON states, while the scanning gate voltage from −100 V to positive voltage leads to same OFF state. The charge trapping model of electrons into the PQ layer was used to explain the origin of the memory properties.

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