کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1266815 1496822 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dual layer semiconducting nanocomposite of silicon nanowire and polythiophene for organic-based field effect transistors
ترجمه فارسی عنوان
نانوکامپوزیت نیمه رسانای دو لایه نانوسیم سیلیکون و پلیتیوفن برای ترانزیستورهای اثر فیلد مبتنی بر آلی
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
چکیده انگلیسی


• A dual layer nanowire-polythiophene composite field effect transistor is proposed.
• Silicon nanowires can enhance effective mobility by 6 times and reduce hysteresis.
• Nanowires should be considered as a viable additive for organic transistors.

We investigate a dual layer active channel of random distributed intrinsic silicon nanowires and solution processing semiconducting polythiophene polymers for organic-based field effect transistors. Primary results show that low density silicon nanowire networks could enhance the effective charge carrier mobility of polythiophene transistors by a factor of six, suggesting that these nanowires act as rapid one-dimensional charge transport bridges in the active channel. Moreover, increasing the nanowire loading in the dual layer nanocomposite could further lessen the transistor hysteresis. The lifetime test of nanowire-polythiophene devices is found to be more sustainable with respect to that of pristine polythiophene in ambient air. These results indicate that semiconducting nanowires should be considered as a viable additive to active channel for next-generation organic field effect transistors.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 35, August 2016, Pages 158–163
نویسندگان
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