کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1267226 1496839 2015 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The locally twisted thiophene bridged phenanthroimidazole derivatives as dual-functional emitters for efficient non-doped electroluminescent devices
ترجمه فارسی عنوان
مشتقات فناترویمیدازول به صورت تیتوفن پیچیده شده به صورت تکه های دوتایی کاربردی برای دستگاه های الکترولیومینسیستی غیر فعال
کلمات کلیدی
فناترویمیدازول، تیوفن، الکترولیومینسانس، فرستنده دوتایی
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
چکیده انگلیسی


• Three phenanthroimidazole derivatives were obtained by using a thiophene bridge.
• They have locally twisted structures and shallow HOMO levels.
• They can serve as dual-functional emitters for high performance non-doped OLEDs.
• This work gives a viable design strategy of thiophene derivatives for EL devices.

A series of locally twisted dual-functional materials namely PIPT, PITT and PIFT have been designed and synthesized by introducing different polyaromatic hydrocarbon groups to a phenanthroimidazole backbone through a thiophene bridge. In these molecules, the thiophene bridge and phenanthroimidazole platform are nearly coplanar and this endows these materials with relatively shallow HOMO levels (−5.35 to −5.21 eV). On the other hand, the bulky polyaromatic hydrocarbon units introduce non-planar twisty structures which reduce molecular aggregations. These three materials show color-tunable emission (emission peak from 468 to 532 nm in film) and high thermal stability (Tg > 160 °C). Simple trilayer devices using these three phenanthroimidazole derivatives as non-doped emitting layers exhibit low turn-on voltages (2.3–2.7 V) and high maximum efficiencies of 3.74, 6.15 and 6.89 cd/A for PIPT, PITT and PIFT, respectively. Above all, owing to their shallow HOMO levels for enabling efficient hole-injection, even simpler bilayer devices employing these materials as hole-transporting emitters show low turn-on voltages (2.6–2.8 V) and high efficiencies of 5.77 cd/A for PIPT, 6.03 cd/A for PITT and 6.04 cd/A for PIFT, respectively. These comparable performances with those of the trilayer configurations show the efficient hole-injection/transport ability of these three newly developed emitters.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 18, March 2015, Pages 61–69
نویسندگان
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