کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1267515 | 972355 | 2012 | 9 صفحه PDF | دانلود رایگان |
A universal low optimum doping concentration of below 5% was demonstrated in phosphorescent organic light-emitting diodes (PHOLEDs) by managing the energy levels of charge transport materials. The device performances of PHOLEDs could be optimized at a low doping concentration of 3% irrespective of the host material in the emitting layer. The suppression of charge trapping and hopping by the dopant through charge transport layer engineering optimized the device performance at low doping concentration. In addition, it was revealed that PHOLEDs with low optimum doping concentration show better quantum efficiency, low efficiency roll-off and low doping concentration dependency of the device performance.
Figure optionsDownload as PowerPoint slideHighlights
► Low optimum doping concentration in phosphorescent organic light emitting diode.
► High efficiency and little efficiency roll-off at low doping concentration.
► Charge transport engineering for low optimum doping concentration.
Journal: Organic Electronics - Volume 13, Issue 2, February 2012, Pages 341–349