کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1267667 972370 2011 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Development of the field-effect mobility in thin films of F16PcCu characterized by electrical in situ measurements during device preparation
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Development of the field-effect mobility in thin films of F16PcCu characterized by electrical in situ measurements during device preparation
چکیده انگلیسی

Films of F16PcCu prepared by physical vapor deposition under high vacuum conditions were characterized from the monolayer range up to 40 nm thickness. The charge carrier mobility in the saturation regime of the output characteristics and the threshold voltage as well as the on/off-ratio were determined during film preparation. The substrate consisted of a n++-doped Si wafer as gate electrode with a thermally grown SiO2 layer as gate dielectric and photolithographically structured films of gold or silver as source and drain electrodes. F16PcCu formed a conductive channel in the interface region at about 2 nm average film thickness. In the subsequent regime of layer formation up to about 8 nm a constant charge carrier mobility was established. The threshold voltage considerably decreased during this period of growth and reached a stable level. Subsequent island formation on top of this channel led to only minor changes in the transistor characteristics although the conductivity along the complete organic thin film decreased considerably. By such in situ characterization different contributions of interfacial and bulk transport could be determined and used to optimize films to be used in organic field effect transistors. Ultrathin films of F16PcCu further showed a considerably faster stabilization of the mobility upon exposure to air, the highest on/off ratios and therefore provide clear advantages for device applications.

Figure optionsDownload as PowerPoint slideHighlights
► Perfluorinated copper phthalocyanine served as n-channel in OFET.
► Growth of the conductive channel was monitored by full transistor characteristics.
► Electron mobility, threshold voltage and on/off ratio changed with film thickness.
► An ultrathin conductive layer was found optimum.
► Parasitic islands were detected on top.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 12, Issue 8, August 2011, Pages 1376–1382
نویسندگان
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