New approach for constrain of hysteresis in organic gate insulator based organic thin film transistor with amelioration of backbone structure

Constrain of hysteresis was studied in pentacene based organic thin film transistors (OTFTs) with ameliorated poly (4-vinyl phenol) (PVP) as an organic gate insulators (OGIs). The PVP–OGIs were intentionally synthesized to investigate the effect of backbone structure on the electrical characteristics of pentacene based OTFTs. The ameliorated PVP–OGIs were synthesized by inducing a ring shape phenol backbone structure, which led to the localization of the hydroxyl group. The hysteresis behaviors from the operation of ameliorated resin based OTFTs in humidified air can verify that the alternative PVP resin drives nearly hysteresis free, and excellent air stability with ultra low slow polarization. Hysteresis variation observed in PVP–OGI based TFT device was confirmed to be related to the proportion of the hydroxyl group and moisture in the dielectric bulk; however, hysteresis could be constrained by another approach with the amelioration of the backbone structure as ring shape phenol backbone of the PVP–OGI.

Figure optionsDownload as PowerPoint slideHighlights
► We hypothesize that hysteresis can be suppressed by modifying the dielectric backbone structure of PVP.
► OGI have been designed and synthesized as a form of backbone consisting of the fusion of each OH phenol.
► Alternative PVP showed low slow polarization in C–F measurement with MIM and MISM device.
► Alternative PVP based OTFT shows totally different hysteresis loop direction in I–V measurement.
► Partially micelle structure induces the localization of the dipoles by O–H group.