کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1267938 | 972385 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Gas sensing with self-assembled monolayer field-effect transistors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
A new sensitive gas sensor based on a self-assembled monolayer field-effect transistor (SAMFET) was used to detect the biomarker nitric oxide. A SAMFET based sensor is highly sensitive because the analyte and the active channel are separated by only one monolayer. SAMFETs were functionalised for direct NO detection using iron porphyrin as a specific receptor. Upon exposure to NO a threshold voltage shift towards positive gate biases was observed. The sensor response was examined as a function of NO concentration. High sensitivity has been demonstrated by detection of ppb concentrations of NO. Preliminary measurements have been performed to determine the selectivity.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 11, Issue 5, May 2010, Pages 895–898
Journal: Organic Electronics - Volume 11, Issue 5, May 2010, Pages 895–898
نویسندگان
Anne-Marije Andringa, Mark-Jan Spijkman, Edsger C.P. Smits, Simon G.J. Mathijssen, Paul A. van Hal, Sepas Setayesh, Nico P. Willard, Oleg V. Borshchev, Sergei A. Ponomarenko, Paul W.M. Blom, Dago M. de Leeuw,