Plasma polymerized methyl methacrylate gate dielectric for organic thin-film transistors

A pentacene-based organic thin-film transistor (OTFT) device with plasma polymerized methyl methacrylate (ppMMA) dielectric film was fabricated. The ppMMA showed a higher dielectric constant of 3.86 than that of conventionally processed PMMA and a MIS capacitor with the ppMMA revealed negligible hysteresis in C–V curves. The OTFT device with the ppMMA dielectric showed a field-effect mobility of 0.08 ± 0.02 cm2 V−1s−1 in the saturation region, a lower threshold voltage of −3 ± 0.15 V, a sub-threshold slope of 0.959 ± 0.05 V/decade, an on/off current ratio (Ion/Ioff) of 1.0 × 104 ± 0.10, and a lower operating voltage of −10 V.