کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1267975 | 972386 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Polythiophene-based field-effect transistors with enhanced air stability
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Polythiophene-based field-effect transistors with enhanced air stability Polythiophene-based field-effect transistors with enhanced air stability](/preview/png/1267975.png)
چکیده انگلیسی
Organic field-effect transistors (OFETs) based on regioregular poly(3-hexyl-thiophene) (P3HT) have been demonstrated with improved ambient-air stability. Substrates of untreated SiO2, octadecyltrichlorosilane (OTS)-treated SiO2, and SiO2 coated with a thin layer of polymethylmethacrylate (PMMA) were compared in terms of OFET electric performance and air stability. We are able to show virtually no change in transistor on/off ratio over a 3-day period in ambient air in OFETs fabricated on SiO2-PMMA substrates. We also studied devices based on OTS-treated PMMA interface. By analyzing the surface morphology, possible mechanisms of the enhanced air stability are discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 11, Issue 2, February 2010, Pages 351–355
Journal: Organic Electronics - Volume 11, Issue 2, February 2010, Pages 351–355
نویسندگان
Yanmin Sun, Xiaofeng Lu, Shiwei Lin, Jeff Kettle, Stephen G. Yeates, Aimin Song,