کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1268549 972409 2008 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Switching in polymeric resistance random-access memories (RRAMS)
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Switching in polymeric resistance random-access memories (RRAMS)
چکیده انگلیسی

Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place. A tentative model is presented that can account for the observed behavior. The impedance analysis shows that the device does not behave homogenously over the entire electrode area and only a fraction of the device area gives rise to switching.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 9, Issue 1, February 2008, Pages 119–128
نویسندگان
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