کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1268552 | 972409 | 2008 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Organic field-effect transistors (OFETs) of highly oriented films of dithiophene-tetrathiafulvalene prepared by zone casting
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی (عمومی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Organic field-effect transistors (OFETs) of highly oriented films of dithiophene-tetrathiafulvalene prepared by zone casting Organic field-effect transistors (OFETs) of highly oriented films of dithiophene-tetrathiafulvalene prepared by zone casting](/preview/png/1268552.png)
چکیده انگلیسی
We report on the preparation of large area coverage of well-oriented films of dithiophene-tetrathiafulvalene (DT-TTF) from solution by using the zone casting technique. The X-ray analysis shows that the molecules are highly ordered in the films with the stacking direction parallel to the substrate. We further demonstrate that it is possible to prepare organic field-effect transistors (OFETs) employing these films. The devices reveal a remarkable OFET mobility with a maximum value of 0.17 cm2/V s. The fact that the films are prepared from solution makes these devices eminently suitable for low-cost electronics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 9, Issue 1, February 2008, Pages 143–148
Journal: Organic Electronics - Volume 9, Issue 1, February 2008, Pages 143–148
نویسندگان
M. Mas-Torrent, S. Masirek, P. Hadley, N. Crivillers, N.S. Oxtoby, P. Reuter, J. Veciana, C. Rovira, A. Tracz,