کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1268634 972415 2007 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Conductance switching, hysteresis, and magnetoresistance in organic semiconductors
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Conductance switching, hysteresis, and magnetoresistance in organic semiconductors
چکیده انگلیسی

The controllability of charge transport through an organic molecular spin-valve system is theoretically investigated on the basis of a Su–Schrieffer–Heeger model combined with the non-equilibrium Green’s function formalism. We show how the formation of polaron in the organic sub-structure leads to a hysteretic conductance switching, via sweeping either the bias voltage or the electrochemical potential. We further obtain an exponential dependence of the magnetoresistance as a function of the applied bias voltage. The implications of calculated results in relation to experiments and device applications are addressed and commented.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Organic Electronics - Volume 8, Issue 5, October 2007, Pages 487–497
نویسندگان
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