کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1268635 | 972415 | 2007 | 7 صفحه PDF | دانلود رایگان |
We investigated the electronic, morphological and transport properties of 6,13-pentacenequinone thin films grown by vacuum thermal evaporation gram on silicon oxide (native and thermally grown) substrates at room temperature using X-ray photoemission spectroscopy, atomic force microscopy and in situ transport measurements. The chemical properties of the molecule have been characterized by high resolution C1s, O1s and Valence Band X-ray photoemission as a function of the thickness and the photoemission peaks were interpreted on the basis of density functional theory calculations. The photoemission analysis of the above mentioned regions reveals characteristic features (namely a double peak on C1s due to the six inequivalent carbon atoms, a single peak on O1s at binding energy of 531.3 eV and a feature centered at 3.7 eV assigned to a convolution of the highest occupied molecular orbitals). Atomic force microscopy measurements show an initial amorphous wetting layer with a subsequent island growth in two different crystalline phases, namely the bulk crystal phase and a metastable substrate induced phase. Finally, electrical measurements evidence the insulating character of 6,13-pentacenequinone films with a resistivity ρ ⩾ 5 × 106 Ω m.
Journal: Organic Electronics - Volume 8, Issue 5, October 2007, Pages 498–504