کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1297625 1498404 2006 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
PTCR effect in BaBiO3-doped BaTiO3 ceramics
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
پیش نمایش صفحه اول مقاله
PTCR effect in BaBiO3-doped BaTiO3 ceramics
چکیده انگلیسی
BaBiO3 shows, at room temperature, a distorted perovskite lattice with monoclinic unit cell (I2/m) characterized by two different B sites, occupied respectively by Bi3+ and Bi5+. The influences of BaBiO3 content on the electrical property and the microstructure of BaTiO3-based materials have been studied. At a low dopant concentration the grain size is not influenced significantly by the donor concentration. With an increase in BaBiO3 content the grain size decreases rapidly. All the prepared BaBiO3 doping BaTiO3-based thermistors show typical PTC effect. As the amount of BaBiO3 added in BaTiO3-based ceramics increases, resistivity appears to exhibit a minimum value. At high BaBiO3 content (≥ 0.3), the resistivity increased again with increasing BaBiO3 content. At a given content of BaBiO3, the influence of sintering temperature on the electrical properties of samples has been investigated. A maximum of ρmax/ρmin ratio was obtained at the sintering temperature equal to 1290 °C at a given content of BaBiO3.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Ionics - Volume 177, Issues 17–18, July 2006, Pages 1543-1546
نویسندگان
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