کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1338273 | 1500282 | 2013 | 12 صفحه PDF | دانلود رایگان |
Full geometry optimizations of mixed-valence (MV) Mn(II)RMn(II)aMn(IV)b Mn(IV)cMn(III)d (1), Ca(II)RMn(III)aMn(III)bMn(IV)cMn(III)d (2) and Ca(II)RCa(II)a Mn(IV)bMn(IV)cMn(III)d (3) clusters by UB3LYP have been performed to elucidate possible roles of substitutions of Mn(II) with Ca(II) in parent manganese oxides. The optimized Mn–Mn and Mn–Ca distances for 1, 2 and 3 have been compared with the EXAFS and XRD experimental structures of the oxygen evolving complex (OEC) of photosystem II (PSII) to elucidate variations of geometrical structures and valence fluctuations by the substitutions. The optimized Mn–O distances of 1, 2 and 3 have been examined to elucidate Jahn–Teller distortions induced by the Mn(III) ions. The computational results have illuminated possible origins of the elongated Mn–Mn distances and Mn–O distances in the high-resolution XRD structure by Umena et al. Implications of the computational results have been discussed in relation to chemical modifications of multi-nuclear manganese complexes with substitutions of Mn(II) with Ca(II) for rational design of artificial catalysts for water oxidation. A new bio-inspired strategy for artificial photosynthesis is also proposed based on a guiding principle, namely use of hole- and electron-doped strongly correlated electron systems (SCES) for oxidation and reduction reactions instead of conventional semiconductor materials.
Mixed-valence (MV) manganese clusters have been calculated by UB3LYP to elucidate possible roles of substitutions of Mn(II) with Ca(II) in parent manganese oxides; for example hole-doping in Mott insulators for water oxidation. Electron-doping in Mott insulator for reduction reactions is also discussed.Figure optionsDownload as PowerPoint slide
Journal: Polyhedron - Volume 57, 2 July 2013, Pages 138–149