کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1413111 1508840 2016 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Matrix assisted low temperature growth of graphene
ترجمه فارسی عنوان
کمک ماتریکس به رشد گرافن در دمای پایین
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی (عمومی)
چکیده انگلیسی

Single layer graphene has been successfully grown via chemical vapour deposition (CVD) at low temperature by using chlorobenzene trapped in a PMMA polymer matrix as the carbon source. By varying the carbon source temperature, we are able to vary the dominant carbon source from just chlorobenzene to PMMA. Raman spectroscopy and atomic force microscopy (AFM) have been used to characterize the as-grown graphene layer, while scanning electron microscopy (SEM) and transmission electron microscopy (TEM) have been used to characterize film quality and growth dynamics. Lower source temperatures (corresponding to a chlorobenzene carbon source) result in high quality single layer graphene whereas higher source temperatures (PMMA carbon source) produce disordered multilayered graphene films. SEM imaging reveals that a preferential surface mediated edge growth mechanism for single layer graphene is observed as a function of growth time. This development offers a new methodology for graphene synthesis at low temperatures with implications for the development of printed graphene structures.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Carbon - Volume 107, October 2016, Pages 325–331
نویسندگان
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