Preparation of near micrometer-sized TiO2 nanotube arrays by high voltage anodization

Highly ordered TiO2 nanotube arrays with large diameter of 680–750 nm have been prepared by high voltage anodization in an electrolyte containing ethylene glycol at room temperature. To effectively suppress dielectric breakdown due to high voltage, pre-anodized TiO2 film was formed prior to the main anodizing process. Vertically aligned, large sized TiO2 nanotubes with double-wall structure have been demonstrated by SEM in detail under various anodizing voltages up to 225 V. The interface between the inner and outer walls in the double-wall configuration is porous. Surface topography of the large diameter TiO2 nanotube array is substantially improved and effective control of the growth of large diameter TiO2 nanotube array is achieved. Interestingly, the hemispherical barrier layer located at the bottom of TiO2 nanotubes formed in this work has crinkles analogous to the morphology of the brain cortex. These structures are potentially useful for orthopedic implants, storage of biological agents for controlled release, and solar cell applications.

► Highly ordered TiO2 nanotube arrays with large diameter of 680–750 nm have been prepared by high voltage anodization.
► Surface topography of the large diameter TiO2 nanotube array is substantially improved.
► The interface between the inner and outer walls in the double-wall configuration is porous.
► The hemispherical barrier layer located at the bottom of TiO2 nanotubes has crinkles analogous to the morphology of the brain cortex.