کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1430592 | 1509191 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural characterization of β-SiC nanowires synthesized by direct heating method
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
Crystal structure of β-SiC nanowires was investigated using Raman spectroscopy, FT-IR, XRD, transmission electron microscopy and selected area electron diffraction. Cubic β-SiC nanowires were synthesized by heating NiO catalyzed Si substrates with WO3 and graphite mixed powders in the growth temperature of 1000–1100 °C. HRTEM image showed atomic arrangements of the grown SiC nanowires with a main growth direction of [111]. Raman spectra showed two characteristic peaks at 796 cm− 1 and 968 cm− 1, which are corresponding to transversal optic mode and longitudinal optic mode of β-SiC, respectively. Also, FT-IR absorption spectroscopy showed a SiC characteristic absorption band at ∼792 cm− 1.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: C - Volume 26, Issues 5–7, July 2006, Pages 805–808
Journal: Materials Science and Engineering: C - Volume 26, Issues 5–7, July 2006, Pages 805–808
نویسندگان
Yunho Baek, YongHwan Ryu, Kijung Yong,