کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1430626 | 1509191 | 2006 | 4 صفحه PDF | دانلود رایگان |
The effect of rapid thermal annealing on InAs quantum dots (QDs) capped with In0.4Ga0.6As/GaAs layer has been investigated by photoluminescence (PL). An unusual red shift of the PL emission peak has been observed for an annealing temperature (Ta) of 650 °C together with a pronounced improvement of the PL from the quantum well like heterocapping layer (QW). This behavior is attributed to the strain induced phase separation of the hetero-capping alloy. However, for Ta = 750 °C, a blue shift of the QDs PL peak has been observed with respect to that of the as-grown sample. For this annealing temperature the PL intensity of the QW exceeds that of the QDs indicating a relatively prominent In/Ga interdiffusion. When annealed at 850 °C, only the PL arising from the QW can be detected in addition to a broadened low energy side band indicating the dissolution of the QDs at that temperature.
Journal: Materials Science and Engineering: C - Volume 26, Issues 5–7, July 2006, Pages 971–974