کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1430627 | 1509191 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical properties of high density InGaN QDs grown by MOCVD
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this article, we investigate the relaxation time constant and optical properties of InGaN QDs following different durations of SiNx treatment. We find that the smaller size QDs have smaller red shift as temperature increasing, only about 10 meV. Time-resolved PL at various emitting wavelength of the three samples is also investigated. Decreasing time constant as increasing QDs size is observed. Besides, we also find the decreasing time constant with shorter wavelength. Meanwhile, decreasing time constant as increasing emitting wavelength is characterized and attributed as an increasing confinement of excitons in QDs with higher localization energy and thus with a higher electron-hole overlap.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: C - Volume 26, Issues 5–7, July 2006, Pages 975–978
Journal: Materials Science and Engineering: C - Volume 26, Issues 5–7, July 2006, Pages 975–978
نویسندگان
C.K. Lee, J.H. Hsu, D.C. Wang, Y.H. Chang, H.C. Kuo, S.C. Wang,