کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1431078 | 1509189 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical gain calculation of mid-infrared InAsN/GaSb quantum-well laser for tunable absorption spectroscopy applications
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Optical gain calculation of mid-infrared InAsN/GaSb quantum-well laser for tunable absorption spectroscopy applications Optical gain calculation of mid-infrared InAsN/GaSb quantum-well laser for tunable absorption spectroscopy applications](/preview/png/1431078.png)
چکیده انگلیسی
We report on optical gain calculations of a dilute-nitride mid-infrared laser structure designed to be grown on InAs substrate. The active region is composed of several strain-compensated type-II “W”-like InAsN/GaSb/InAsN quantum wells adapted to operate near 3.3 μm at room temperature. For typical injected carrier density σ = 1.1012 cm− 2, the theoretical laser structure performances reveal a gain value at around 1000 cm− 1 at 300 K, inducing a modal gain value equal to 50 cm− 1. Low radiative current densities lower than 100 A/cm2 are predicted, indicating that this dilute-nitride structure could operate at 300 K with small threshold current density.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: C - Volume 28, Issues 5–6, 1 July 2008, Pages 751–754
Journal: Materials Science and Engineering: C - Volume 28, Issues 5–6, 1 July 2008, Pages 751–754
نویسندگان
M. Debbichi, A. Ben Fredj, A. Bhouri, M. Saïd, J.-L. Lazzari, Y. Cuminal, A. Joullié, P. Christol,