کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1431116 1509189 2008 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization of CuIn1 − xAlxS2 thin films prepared by thermal evaporation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
پیش نمایش صفحه اول مقاله
Characterization of CuIn1 − xAlxS2 thin films prepared by thermal evaporation
چکیده انگلیسی

Ingots containing single crystals of the quaternary alloys CuIn1 − xAlxS2 (CIAS) were grown by a horizontal Bridgman method for compositions with x = 0, 0.2 and x = 0.4. (CIAS) thin films were prepared by thermal evaporation technique on to glass substrates. Structural and optical properties of the films were studied in function of the Al content. Band gap, and absorption coefficients were determined from the analysis of the optical spectra (transmittance and reflectance as a function of wavelength) recorded by a spectrophotometer. The samples have direct bandgap energies of 1.95 eV (x = 0), 2.06 eV (x = 0,2) and 2.1 eV (x = 0,4). These optical results were correlated with the structural analysis by X-Ray diffraction.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: C - Volume 28, Issues 5–6, 1 July 2008, Pages 954–958
نویسندگان
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