کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1431123 | 1509189 | 2008 | 4 صفحه PDF | دانلود رایگان |

The effect of post-growth rapid thermal annealing on the photoluminescence properties of long wavelength low density InAs/GaAs (001) quantum dots (QDs) with well defined electronic shells has been investigated. For an annealing temperature of 650 °C for 30 s, the emission wavelength and the intersublevel spacing energies remain unchanged while the integrated PL intensity increases. For higher annealing temperature, blue shift of the emission energy together with a decrease in the intersublevel spacing energies are shown to occur due to the thermal activated In–Ga interdiffusion. While, this behaviour is commonly explained as a consequence of the enrichment in Ga of the QDs, the appearance of an additional exited state for annealing temperatures higher than 650 °C suggests a variation of the intermixed QDs's volume/diameter ratio toward QDs's enlargement.
Journal: Materials Science and Engineering: C - Volume 28, Issues 5–6, 1 July 2008, Pages 1002–1005