P-Type dye-sensitized solar cells: Enhanced performance with a NiO compact blocking layer

• Different coatings of a compact NiO blocking layer was introduced for p-DSCs.
• The charge recombination was suppressed with a compact NiO blocking layer.
• The carrier lifetime was improved for p-DSCs with different coatings.

A photoactive NiO electrode for p-type dye-sensitized solar cells (p-DSCs) has been equipped by the introduction of different coatings of a compact NiO blocking layer. This study examined the facile process for the fabrication of a compact NiO blocking layer by decomposing an ethanolic precursor solution of nickel acetate tetrahydrate. The P1-dye used as the photosensitizer for the NiO electrode in the p-DSCs device and their performances have been analyzed. The enhancement of both short-circuit photocurrent (Jsc) and fill factor (FF) resulted in a twofold increase in the power conversion efficiency (η). The electrochemical impedance spectroscopy (EIS) and open-circuit voltage decay (OCVD) measurements demonstrated that charge recombination was suppressed when a compact NiO blocking layer was applied. The best p-DSC was achieved by employing spin-coated process for twice. The carrier lifetime of all the devices with a compact NiO blocking layer was improved compared to the bare cell.

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