Effect of gamma irradiation on structural, electrical and optical properties of nanostructure thin films of nickel phthalocyanine

• Phthalocyanines containing nickel were synthesized and characterized.
• Electronic and optical properties of nickel phthalocyanines were reported.
• NiPc films have a radiation resistance up to 300 kGy gamma dose.

A thermal evaporation technique at room temperature and in a vacuum of 10−4 Pa has been used to prepare deposit thin films of nickel phthalocyanine. The prepared samples were irradiated at room temperature with absorbed doses 100, 200 and 300 kGy. Thin films have been identified before and after irradiate by X-ray diffraction and Fourier transformation infrared. It was found that the films have nano-size structure; also the films have a radiation resistance up to 300 kGy gamma dose.The optical properties of as deposited and irradiated thin films were investigated by spectrophotmetric at wavelength range 200–2500 nm. The optical constants were calculated for as deposited and irradiated thin films. The optical energy gaps and oscillator energy of samples decrease with increase gamma ray doses, while the dispersion energy, lattice dielectric constant, high frequency dielectric constant and N/m* increase with increasing gamma.