An organic Schottky diode (OSD) based on a-silicon/polycarbazole contact

• Fabrication and characterization of a-Si/polycarbazole based organic Schottky diode is presented.
• a-Si contact has been used in place of conventional metal contact to form a Schottky contact.
• The device exhibits better results in terms of ideality factor, barrier height and reverse saturation current.
• This diode exhibits a very high rectification ratio of 1.78 × 105 at ±0.9 V.
• The diode exhibits a very low dark current (∼10−14 A) for attractive photonic applications.

In this paper a novel organic Schottky diode (OSD) based on polycarbazole is proposed. The article presents fabrication and experimental characterization of an amorphous silicon/polycarbazole organic Schottky diode, particularly with configuration a-Si/p-PCz/ITO, wherein in the said novel Schottky diode amorphous silicon (a-Si) contact has been used in place of conventional metal contact on the semiconducting polymer to form a rectifying contact. The characterization of polymer film was done in terms of morphology, absorbance versus wavelength, bandgap and thickness. I–V measurement was performed by Semiconductor Device Analyzer. The electrical parameters such as barrier height, ideality factor, rectification ratio and reverse saturation current as extracted from I–V characteristics of the device were found to be much better than those reported earlier for Schottky diodes based on polycarbazole. The proposed organic Schottky diode (OSD) exhibits a very low dark current (∼10−14 A) and is therefore expected to have great commercial applications.

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