Field effect transistor behavior of organic light-emitting diodes with a modified configuration of ITO anode

We have developed the organic light-emitting diodes (OLEDs) with a modified configuration of ITO anode in which a thin channel was etched to form a bottom-contact field effect transistor (FET) using ITO and MgAg as a source/drain electrode and a gate electrode, respectively. The hole injection layer in OLEDs functioned as an active layer of FET and the other organic layers as insulator-like layer. The devices were found to exhibit a behavior of FET due to horizontal charge migration between source and drain, and an electro-optical transfer characteristic due to vertical charge transport and recombination. We have investigated the dependence of drain current on the channel length from 5 to 30 μm and found that the modified channel length could change drain current directionally and quantitatively.