Highly crystalline and soluble dodecylbenzene sulfonic acid doped poly(o-toluidine)

Dodecylbenzene sulfonic acid (DBSA) doped poly(o-toluidine) (POT) was synthesized by oxidative polymerization technique. The optical, structural, morphological, thermal and electrical properties of the POT-DBSA have been investigated. It was found that conducting emeraldine salt of POT-DBSA is stable in chloroform. X-ray diffraction showed that the POT-DBSA is a highly crystalline polymer due to formation of H-bonding across chains. The scanning electron micrograph reveals a flaky like feature with few globular structures and the size of the grain was about 3 μm. The highest conductivity of POT-DBSA was found to be 1.88 × 10−3 S/cm at 1:1 molar ratio of oxidant to o-toludine and at 0.18 M of DBSA. Schottky diode based on POT-DBSA was fabricated using Al as Schottky contact and Cu as an Ohmic contact. The junction parameters including ideality factor and barrier height of the diode was 3.0 and 0.989 eV, respectively.