کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1441743 | 1509426 | 2011 | 4 صفحه PDF | دانلود رایگان |

We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluorinated monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 × 10−5 cm2 V−1 s−1.
► We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers using both a bottom-gate and a top-gate geometry.
► Current modulation by using SAMs in the top-gate geometry is more pronounced.
► We modified silver electrodes with a perfluorinated SAM which has injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene).
► Saturated field-effect mobility is of 6 × 10−5 cm2 V−1 s−1.
Journal: Synthetic Metals - Volume 161, Issues 21–22, November–December 2011, Pages 2226–2229