کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1441743 1509426 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
پیش نمایش صفحه اول مقاله
Controlling charge injection by self-assembled monolayers in bottom-gate and top-gate organic field-effect transistors
چکیده انگلیسی

We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers (SAMs) using both a bottom-gate and a top-gate geometry. The current modulation by using SAMs is more pronounced in the top-gate geometry due to the better defined upper surface of the bottom source and drain electrodes. By modifying Ag electrodes with a perfluorinated monolayer an injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene) can be surmounted, enabling the measurement of the saturated field-effect mobility of 6 × 10−5 cm2 V−1 s−1.


► We investigate the modulation of the charge injection in organic field-effect transistors with self-assembled monolayers using both a bottom-gate and a top-gate geometry.
► Current modulation by using SAMs in the top-gate geometry is more pronounced.
► We modified silver electrodes with a perfluorinated SAM which has injection barrier as high as 1.6 eV into poly(9,9-dioctylfluorene).
► Saturated field-effect mobility is of 6 × 10−5 cm2 V−1 s−1.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 161, Issues 21–22, November–December 2011, Pages 2226–2229
نویسندگان
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