کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1441968 1509429 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoelectrochemical cells based on LB films of fullerene–thiophene derived dyads
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
پیش نمایش صفحه اول مقاله
Photoelectrochemical cells based on LB films of fullerene–thiophene derived dyads
چکیده انگلیسی

Photoelectrochemical properties of fullerene with three oligothiophenes (1T-F, 2T-F, 3T-F), ethylenedioxythiophenyl (EDOT-F) and hexylthiophenyl (HXT-F) groups were investigated with the photocurrent measurements. Electron paramagnetic resonance (EPR) spectroscopy has been used for study the fullerene–thiophene derived systems in wide temperature range. For electrochemical examination of these systems Langmuir–Blodgett (LB) layers deposited on a gold substrate were prepared. The light-induced photocurrent study shows that the structure of the dyad has an influence on both photovoltage and photocurrent, although these two variables are not correlated with each other. The role of the structure of the dyads is also seen in electron paramagnetic resonance investigations. All these results supported by previous IR and UV–vis spectral studies suggest, that the photoinduced electron transfer from oligothiophenes or EDOT and HXT to C60 is a primary process of the photocurrent generation in the fullerene–thiophene-derived dyads.

Photoelectrochemical properties of fullerene with three oligothiophenes (1T-F, 2T-F, 3T-F), ethylenedioxythiophenyl (EDOT-F) and hexylthiophenyl (HXT-F) groups were investigated with the photocurrent and EPR measurements.Figure optionsDownload as PowerPoint slideHighlights
► Fullerene-tiophene LB dyads’ layers as photoelectrochemical materials.
► Light switching of photovoltage and photocurrent generation examinations.
► EPR identification and activation energy determination of C60+ and C60− centres.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 161, Issues 15–16, August 2011, Pages 1640–1645
نویسندگان
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