I–V characteristics of the p–n junction between vertically aligned ZnO nanorods and polyaniline thin film

The characteristics of the p–n junction between vertically aligned ZnO nanorods and polyaniline (PANI) thin film were investigated. The rectifying behavior of the I–V curve of ZnO/PANI diode was verified with assembled ZnO/PANI structures. The cut-in voltage of the p–n junction was found to be around 0.5 V and the reverse breakdown voltage was about −27 V. In addition, the effects of UV illumination and NH3 exposure on the I–V characteristics of ZnO/PANI configuration were also investigated.