کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1443127 | 988142 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrochemical and photoelectrochemical study of gallium arsenide-polybithiophene composite
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrochemical and photoelectrochemical study of gallium arsenide-polybithiophene composite Electrochemical and photoelectrochemical study of gallium arsenide-polybithiophene composite](/preview/png/1443127.png)
چکیده انگلیسی
Bithiophene (BiTh) was galvanostatically polymerized in the presence of gallium arsenide (GaAs) particles at different concentration. The properties of the composite layers were studied by electrochemical method (cyclic voltammetry), UV-vis spectroscopy and photocurrent measurements. From UV-vis spectroscopy studies, the absorbance of the composites is larger than the polybithiophene absorbance in the UV region. The p-type semiconducting behaviour of the reduced polybithiophene was studied by photocurrent measurements. It was observed that the photocurrents of the composites was higher than that of the PBiTh without GaAs, and increased with GaAs concentration.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 159, Issue 13, July 2009, Pages 1349-1352
Journal: Synthetic Metals - Volume 159, Issue 13, July 2009, Pages 1349-1352
نویسندگان
F. Hab Elhames, B. Nessark, N. Boumaza, A. Bahloul, D. Bouhafs, A. Cheriet,