Electrochemical and photoelectrochemical study of gallium arsenide-polybithiophene composite

Bithiophene (BiTh) was galvanostatically polymerized in the presence of gallium arsenide (GaAs) particles at different concentration. The properties of the composite layers were studied by electrochemical method (cyclic voltammetry), UV-vis spectroscopy and photocurrent measurements. From UV-vis spectroscopy studies, the absorbance of the composites is larger than the polybithiophene absorbance in the UV region. The p-type semiconducting behaviour of the reduced polybithiophene was studied by photocurrent measurements. It was observed that the photocurrents of the composites was higher than that of the PBiTh without GaAs, and increased with GaAs concentration.