کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1443282 | 1509462 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Control of device characteristics of ambipolar organic field-effect transistors using the hydroxyl in organic insulator
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Control of device characteristics of ambipolar organic field-effect transistors using the hydroxyl in organic insulator Control of device characteristics of ambipolar organic field-effect transistors using the hydroxyl in organic insulator](/preview/png/1443282.png)
چکیده انگلیسی
Using poly(vinylalcohol) with hydroxyl and poly(cyanoethylacrylate) without hydroxyl for the gate-insulating layer, we studied the influence of the hydroxyl on the device characteristics of ambipolar organic field-effect transistors (OFET) with copper–phthalocyanine used for the organic semiconductor. More than 10-fold higher mobility and a large threshold voltage were observed in the OFET with poly(cyanoethylacrylate). The ratio of the hole mobility and electron mobility of the ambipolar transistor with poly(vinylalcohol) was two times of that of the ambipolar transistor with poly(cyanoethylacrylate). The presence of the hydroxyl in the gate-insulating layer can control device characteristics of ambipolar OFETs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 158, Issues 8–9, June 2008, Pages 355–358
Journal: Synthetic Metals - Volume 158, Issues 8–9, June 2008, Pages 355–358
نویسندگان
Hideyuki Kawaguchi, Masateru Taniguchi, Tomoji Kawai,