کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1443548 1509472 2007 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Solution-processed polycrystalline copper tetrabenzoporphyrin thin-film transistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد بیومتریال
پیش نمایش صفحه اول مقاله
Solution-processed polycrystalline copper tetrabenzoporphyrin thin-film transistors
چکیده انگلیسی

The demonstration of organic thin-film field-effect transistors (OFETs) using a solution-processable form of the organometallic molecule copper tetrabenzoporphyrin (CuTBP) is reported. A soluble precursor was spun-cast into an amorphous, insulating thin-film, and thermally annealed at 165 °C for 30 min into a polycrystalline organic semiconductor. Absorbance spectroscopy displayed characteristics of porphyrin macrocycles. Microscopy reveals the formation of domains comprising aligned nanorod aggregates with dimensions of 55 nm wide, 300 nm long, and 100 nm tall on the gate insulator surface. OFETs demonstrated field-effect mobilities typically on the order of 0.1 cm2/V s, threshold voltages around 5 V, subthreshold slopes around 4 V/dec, and ON-/OFF-current ratios near 104.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 157, Issues 4–5, March 2007, Pages 190–197
نویسندگان
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