Effect of annealing temperature and graphene concentrations on photovoltaic and NIR-detector applications of PbS/rGO nanocomposites

The effect of annealing temperature on photovoltaic and near-infrared (NIR) detector applications of PbS nanoparticles (NPs) and PbS/graphene nanocomposites was investigated. The products were synthesized by a simple co-precipitation method and graphene oxide (GO) sheets were used as graphene source. Several characterization techniques were used to show transfer of the GO into reduced graphene oxide (rGO) during the synthesis process. In addition, the effect of graphene concentrations on morphology, structure, photovoltaic, and detector parameters of the samples were studied. Transmission electron microscope (TEM) images showed that, the PbS NPs were agglomerated, while, the PbS/rGO nanocomposites were dispersed completely after annealing under H2/Ar gas atmosphere. UV–visible spectrometer showed an absorption peak for all samples in the near infrared red (NIR) region of the electromagnetic spectrum. The results indicated that, photocurrent intensity, responsivity of the samples to an NIR source, and solar-cell efficiency were affected by annealing of samples and graphene concentrations.