Resistive switching characteristics of sputtered AlN thin films

AlN thin films were deposited on Pt/Ti/SiO2/Si substrates using a radio-frequency magnetron sputtering technique. The effect on the switch current–voltage characteristics of four different materials in the electrode fabricated on top of the AlN film was investigated. The deposition time and nitrogen content in the sputtering atmosphere were changed to adjust the thickness and composition of the AlN thin films, respectively. The influence of film thickness and content on the resistive switching behavior was discussed. The possible mechanism of resistive switching was examined via analyses of the electrical resistive switching characteristics, forming voltage, and on/off current ratio.