Transparent conducting tin-doped Ga2O3 films deposited on MgAl2O4 (1 0 0) substrates by MOCVD

Tin-doped gallium oxide (Ga2O3:Sn) films with different Sn contents were deposited on MgAl2O4 (1 0 0) substrates by metal organic chemical vapor deposition (MOCVD) technique. Structural analysis revealed that the films with 1% to 5% Sn were polycrystalline structure of β-Ga2O3 whereas the samples containing 8–12% Sn were microcrystalline. The resistivity of the film could be reduced by almost eleven orders of magnitude by Sn doping, the 10% Sn doped sample possessing the best conducting property with resistivity of about 3.1×10−2 Ω cm. The average transmittance for the 10% Sn doped sample exceeded 80% with a band gap of about 4.14 eV.