کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1459327 | 989592 | 2015 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Reduced leakage current and large polarization of Na0.5Bi0.5Ti0.98Mn0.02O3 thin film annealed at low temperature Reduced leakage current and large polarization of Na0.5Bi0.5Ti0.98Mn0.02O3 thin film annealed at low temperature](/preview/png/1459327.png)
Na0.5Bi0.5Ti0.98Mn0.02O3 (NBTMn) thin films were fabricated on indium tin oxide/glass substrates via chemical solution deposition and annealed at various temperatures from 450 to 600 °C and the influence of annealing temperature on their crystallization and electrical properties was investigated. X-ray diffraction measurement reveals that the film can be crystallized at an annealing temperature as low as 500 °C. The leakage current shows a decreasing tendency with a low and stable leakage current density of 10–7 A/cm2 as the annealing temperature increases to 550 °C. However, the electrical properties degrade at 600 °C, which may be due to the recrystallization effect together with ions volatilization. The NBTMn thin film annealed at 550 °C exhibits the higher ferroelectricity with a large remanent polarization (Pr) of 38 μC/cm2, which is nearly to the value of NBT ceramics.
Journal: Ceramics International - Volume 41, Issue 10, Part B, December 2015, Pages 14179–14183