Synthesis and color-tunable emission studies of Y2Si3O3N4:Ce3+,Tb3+ phosphors

The exploration of new color-tunable materials for solid-state lighting based on InGaN semiconductors has attracted great attention. Herein a series of Ce3+, Tb3+ and Ce3+/Tb3+ co-doped Y2Si3O3N4 phosphors have been developed. The intense green emission peaking at 543 nm was observed in the Y2Si3O3N4:Ce3+,Tb3+ phosphors. Energy transfer (ET) process from Ce3+ to Tb3+ was verified via the variations of the lifetime values of Ce3+, and the ET mechanism is ascribed to the dipole–dipole interaction. The ET critical distance has been calculated by the concentration quenching method. It is believed that the Ce3+/Tb3+-activated Y2Si3O3N4 phosphors can serve as potential materials for near ultraviolet (n-UV) light emitting diode (LED).