کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1460869 | 989610 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration Electronic structure of conducting Al-doped ZnO films as a function of Al doping concentration](/preview/png/1460869.png)
چکیده انگلیسی
Transparent conducting Al-doped ZnO films were deposited by atomic layer deposition with various of Al doping concentrations. In order to explain the change in resistivity of Al-doped ZnO films depending on Al doping concentration, we investigated the correlations between the conducting property and electronic structure in terms of atomic configuration, the evolution of the conduction band and band gap, and band alignments (conduction band offset between minimum of conduction band and Fermi level, ΔECB). ZnO film Al-doped at ~3 at% and deposited at 250 °C showed the lowest resistivity, which resulted in changes in the conduction band of insulating Al2O3 film, and increases in the band gap and conduction band offset (ΔECB).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 41, Issue 1, Part B, January 2015, Pages 1641–1645
Journal: Ceramics International - Volume 41, Issue 1, Part B, January 2015, Pages 1641–1645
نویسندگان
Hyun-Woo Park, Kwun-Bum Chung, Jin-Seong Park, Seungmuk Ji, Kyungjun Song, Hyuneui Lim, Moon-Hyung Jang,