Structural and electrical properties of SrFexTi1−xO3 (x=0.001, 0.005 and 0.01) thin films prepared by pulsed laser depositions

Three different SrFexTi1−xO3 (x=0.001, 0.005 and 0.01) thin films were deposited on Pt/Ti/SiO2/Si (100) substrates by pulsed laser depositions at different substrate temperatures. The crystalline structure and surface morphology were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The dielectric properties of the films were studied by using Agilent 4980A LCR meter. The XRD results indicate that the films deposited above 650 °C shows a cubic perovskite structure with (110) orientation. Leakage current tests show that the conduction mechanism in the three different SrFexTi1−xO3 (x=0.001, 0.005 and 0.01) thin films display ohmic behavior at low electric field and schottky emission at high electric field, respectively.