Electrical characterization of ZnO-based thin film nanodiodes fabricated through atomic layer deposition: Effect of electron beam irradiation on interfacial property

ZnO thin films were deposited onto p-type (P-Si) Si wafers using atomic layer deposition. The rectifying performance of the deposited ZnO thin films was confirmed by current–voltage characteristics. P-Si/ZnO-based nanodiodes were subjected to electron irradiation. Depending on the irradiation conditions, the diode performance changed significantly. At 0.8 MeV, the diode was degraded in terms of both forward and reverse currents. At 2.5 MeV, the reverse current in the nanodiode decreased and the forward current increased, leading to significant enhancement in the current ratio. The electrical response was monitored using impedance spectroscopy. Impedance analysis indicated that depletion regions are significantly affected by electron irradiation.