Optical and electrical properties of p-type Ag-doped ZnO nanostructures

Zn1−xAgxO nanoparticles (NPs) (x=0, 0.02, 0.04, and 0.06) were synthesized by a sol–gel method. The synthesized undoped ZnO and Zn1−xAgxO-NPs were characterized by X-ray diffraction analysis (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and UV–visible spectroscopy. The XRD patterns indicated that undoped and Ag-doped ZnO crystallize in a hexagonal wurtzite structure. The TEM images showed ZnO NPs with nearly spherical shapes, with particle size distributed over the nanometer range. Evidence of dopant incorporation is demonstrated in the XPS measurements of the Ag-doped ZnO NPs. The Raman measurements indicated that the undoped and Ag-doped ZnO-NPs had a high crystalline quality. From the result of UV–vis, the band-gap values of prepared undoped and Ag-doped ZnO were found to decrease with an increase in Ag concentration. The obtained undoped and Ag-doped ZnO nanoparticles were used as a source material to grow undoped and Ag-doped ZnO nanowires on n-type Si substrates, using a thermal evaporation set-up. Two probe method results indicated that the Ag-doped ZnO nanowires exhibit p-type properties.