Electrical properties of chemical solution deposited (Bi0.9RE0.1)(Fe0.975Cu0.025)O3−δ (RE=Ho and Tb) thin films

Pure BiFeO3 (BFO) and (Bi0.9RE0.1)(Fe0.975Cu0.025)O3−δ (RE=Ho and Tb, denoted by BHFCu and BTFCu) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. The BHFCu and BTFCu thin films showed improved electrical and ferroelectric properties compared to pure BFO thin film. Among them, the BTFCu thin film exhibited large remnant polarization (2Pr), low coercive field (2Ec) and reduced leakage current density, which are 89.15 C/cm2 and 345 kV/cm at 1000 kV/cm and 5.38×10−5 A/cm2 at 100 kV/cm, respectively.