Effects of Li doping on dielectric properties of Ag(Ta0.5Nb0.5)O3 thick films

Low loss ferroelectric materials have been extensively investigated for the high frequency device applications. Especially, weak frequency dispersion materials with high dielectric permittivity and low loss tangent have enormous potential for electronic components including filters, and embedded capacitors. Ag(Ta0.5Nb0.5)O3 thick films have been prepared by low temperature sintering aid Li2CO3 (0, 1, 3 and 5 wt%). Ag(Ta0.5Nb0.5)O3 thick films were characterized by X-ray diffraction analysis and scanning electron microscopy. The dielectric and ferroelectric properties were also investigated. We observed very weak frequency dispersion of dielectric permittivity at the microwave frequency range.